Phase control for carrier aggregation

ABSTRACT

Phase control for carrier aggregation. In some embodiments, a carrier aggregation circuit can include a first filter configured to allow operation in a first frequency band, and a second filter configured to allow operation in a second frequency band. The circuit can further include a first path implemented between the first filter and a common node, with the first path being configured to provide a substantially matched impedance for the first frequency band and a substantially open-circuit impedance for the second frequency band. The circuit can further include a second path implemented between the second filter and the common node, with the second path being configured to provide a substantially matched impedance for the second frequency band and a substantially open-circuit impedance for the first frequency band.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. application Ser. No.14/683,512 filed Apr. 10, 2015, entitled CIRCUITS AND METHODS RELATED TORADIO-FREQUENCY RECEIVERS HAVING CARRIER AGGREGATION, which claimspriority to and the benefit of the filing date of U.S. ProvisionalApplication No. 61/978,808 filed Apr. 11, 2014, entitled CIRCUITS ANDMETHODS RELATED TO RADIO-FREQUENCY RECEIVERS HAVING CARRIER AGGREGATION,the benefits of the filing dates of which are hereby claimed and thedisclosures of which are hereby expressly incorporated by referenceherein in their entirety.

BACKGROUND Field

The present disclosure relates to carrier aggregation in radio-frequencyapplications.

Description of the Related Art

In some radio-frequency (RF) applications, cellular carrier aggregation(CA) can involve two or more RF signals being processed through a commonpath. For example, carrier aggregation can involve use of a path for aplurality of bands having frequency ranges that are sufficientlyseparated. In such a configuration, simultaneous operation of more thanone band can be achieved.

SUMMARY

In accordance with a number of implementations, the present disclosurerelates to a carrier aggregation (CA) circuit that includes a firstfilter configured to allow operation in a first frequency band, and asecond filter configured to allow operation in a second frequency band.The CA circuit further includes a first path implemented between thefirst filter and a common node, with the first path being configured toprovide a substantially matched impedance for the first frequency bandand a substantially open-circuit impedance for the second frequencyband. The CA circuit further includes a second path implemented betweenthe second filter and the common node, with the second path beingconfigured to provide a substantially matched impedance for the secondfrequency band and a substantially open-circuit impedance for the firstfrequency band.

In some embodiments, the first filter and the second filter can be partsof a diplexer. The diplexer can include an input port configured toreceive a radio-frequency (RF) signal from an antenna. The common nodecan be configured to be coupled to an input of a low-noise amplifier(LNA). The LNA can be configured to amplify frequency bands of thereceived RF signal corresponding to the first frequency band and thesecond frequency band. The first frequency band can include, forexample, a B3 band having a frequency range of 1.805 to 1.880 GHz, andthe second frequency band can include, for example, a B1 band having afrequency range of 2.110 to 2.170 GHz. The second frequency band canfurther include a B4 band having a frequency range of 2.110 to 2.155GHz.

In some embodiments, the first frequency band can include a B2 bandhaving a frequency range of 1.930 to 1.990 GHz, and the second frequencyband can include a B2 band having a frequency range of 2.110 to 2.155GHz. The first frequency band can further include a B25 band having afrequency range of 1.930 to 1.995 GHz. In some embodiments, the firstfrequency band can include a B2 band having a frequency range of 1.930to 1.990 GHz, and the second frequency band can include a B4 band havinga frequency range of 2.110 to 2.155 GHz.

In some embodiments, the first path can include a first phase shiftingcircuit, and the second path can include a second phase shiftingcircuit. In some embodiments, the first phase shifting circuit caninclude, for example, two series capacitances and an inductive shuntpath that couples a node between the two capacitances and a ground. Thesecond phase shifting circuit can include two series capacitances and aninductive shunt path that couples a node between the two capacitancesand a ground. In some embodiments, at least some of the capacitances andinductances of the first and second phase shifting circuits can beimplemented as lumped elements. In some embodiments, at least some ofthe capacitances and inductances of the first and second phase shiftingcircuits can be implemented as distributed elements.

In some embodiments, the first phase shifting circuit can include twoseries inductances and a capacitive shunt path that couples a nodebetween the two inductances and a ground. The second phase shiftingcircuit can include two series inductances and a capacitive shunt paththat couples a node between the two inductances and a ground. In someembodiments, at least some of the capacitances and inductances of thefirst and second phase shifting circuits can be implemented as lumpedelements. In some embodiments, at least some of the capacitances andinductances of the first and second phase shifting circuits can beimplemented as distributed elements.

In some embodiments, each of the first path and the second path caninclude a switch to allow the CA circuit to operate in a CA mode or anon-CA mode. The switch for the first path can be at an output of thefirst phase shifting circuit and the switch for the second path can beat an output of the second phase shifting circuit. Both switches for thefirst and second paths can be closed for the CA mode. One of the twoswitches can be closed and the other switch can be closed for the non-CAmode.

In some implementations, the present disclosure relates to aradio-frequency (RF) module having a packaging substrate configured toreceive a plurality of components, and a carrier aggregation (CA)circuit implemented on the packaging substrate. The CA circuit includesa first filter configured to allow operation in a first frequency band,and a second filter configured to allow operation in a second frequencyband. The CA circuit further includes a first path implemented betweenthe first filter and a common node, with the first path being configuredto provide a substantially matched impedance for the first frequencyband and a substantially open-circuit impedance for the second frequencyband. The CA circuit further includes a second path implemented betweenthe second filter and the common node, with the second path beingconfigured to provide a substantially matched impedance for the secondfrequency band and a substantially open-circuit impedance for the firstfrequency band.

In some embodiments, each of the first filter and the second filter caninclude a surface acoustic wave (SAW) filter. The first SAW filter andthe second SAW filter can be implemented as a diplexer. In someembodiments, the RF module can further include a low-noise amplifier(LNA) implemented on the packaging substrate. The LNA can be coupled tothe common node to receive a combined signal from the first path and thesecond path. In some embodiments, the RF module can be a front-endmodule. In some embodiments, the RF module can be a diversity receive(DRx) module.

In some embodiments, the first path can include a first phase shiftingcircuit, and the second path can include a second phase shiftingcircuit. Each of the first phase shifting circuit and the second phaseshifting circuit can include capacitance and inductance elements. Atleast some of the capacitance and inductance elements can be implementedas passive devices mounted on or within the packaging substrate.

In a number of teachings, the present disclosure relates to a method forfabricating a radio-frequency (RF) module. The method includes providingor forming a packaging substrate configured to receive a plurality ofcomponents, and implementing a carrier aggregation (CA) circuit on thepackaging substrate. The CA circuit includes a first filter configuredto allow operation in a first frequency band, and a second filterconfigured to allow operation in a second frequency band. The CA circuitfurther includes a first path implemented between the first filter and acommon node, with the first path being configured to provide asubstantially matched impedance for the first frequency band and asubstantially open-circuit impedance for the second frequency band. TheCA circuit further includes a second path implemented between the secondfilter and the common node, with the second path being configured toprovide a substantially matched impedance for the second frequency bandand a substantially open-circuit impedance for the first frequency band.

According to some implementations, the present disclosure relates to aradio-frequency (RF) device having a receiver configured to process RFsignals, and an RF module in communication with the receiver. The RFmodule includes a carrier aggregation (CA) circuit. The CA circuitincludes a first filter configured to allow operation in a firstfrequency band, and a second filter configured to allow operation in asecond frequency band. The CA circuit further includes a first pathimplemented between the first filter and a common node, with the firstpath being configured to provide a substantially matched impedance forthe first frequency band and a substantially open-circuit impedance forthe second frequency band. The CA circuit further includes a second pathimplemented between the second filter and the common node, with thesecond path being configured to provide a substantially matchedimpedance for the second frequency band and a substantially open-circuitimpedance for the first frequency band. The RF device further includesan antenna in communication with the RF module, with the antenna beingconfigured to receive the RF signals.

In some embodiments, the RF device can be a wireless device. In someembodiments, the wireless device can be a cellular phone. In someembodiments, the antenna can include a diversity antenna, and the RFmodule can include a diversity receive (DRx) module). The wirelessdevice can further include an antenna switch module (ASM) configured toroute the RF signals from the diversity antenna to the receiver. In someembodiments, the DRx module can be implemented between the diversityantenna and the ASM.

For purposes of summarizing the disclosure, certain aspects, advantagesand novel features of the inventions have been described herein. It isto be understood that not necessarily all such advantages may beachieved in accordance with any particular embodiment of the invention.Thus, the invention may be embodied or carried out in a manner thatachieves or optimizes one advantage or group of advantages as taughtherein without necessarily achieving other advantages as may be taughtor suggested herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a carrier aggregation (CA) configuration that includes a CAcircuit configured to receive a plurality of inputs and yield an output.

FIG. 2 shows a CA aggregation configuration can involve more than tworadio-frequency (RF) signals.

FIG. 3 shows a more specific example where a CA circuit having one ormore features as described herein can be implemented with a low-noiseamplifier (LNA) in a receiver.

FIG. 4 shows an aggregation configuration where an RF signal isseparated at a common input node (RF_IN), and each of the two separatedRF signals is processed by a band-pass filter and amplified by an LNA.

FIG. 5 shows an example of an aggregation configuration where additionalfiltering of LNA outputs can be implemented to better isolate thefrequency band distributions between different bands.

FIG. 6 shows a CA configuration that can be a more specific example ofthe configuration of FIG. 3.

FIG. 7 shows the CA configuration of FIG. 6 being operated in a CA mode.

FIG. 8 shows an example CA configuration where the first and secondsignal paths of FIG. 7 can be configured to provide selected impedancesto facilitate the CA operation.

FIG. 9 shows two isolated receive (Rx) paths associated with examplebands B3 and B1/4.

FIG. 10 shows example Smith plots of complex impedance values for thecircuit of FIG. 9.

FIG. 11 shows two isolated receive (Rx) paths associated with theexample bands B3 and B1/4, where each path includes a first phaseshifting circuit, a filter, and a second phase shifting circuit betweenits antenna node and an output node.

FIG. 12 shows example Smith plots of complex impedance values for thecircuit of FIG. 11.

FIG. 13 shows the two example receive (Rx) paths of FIG. 11 connected atthe ends so as to yield a common antenna node and a common output node.

FIG. 14 shows example Smith plots of complex impedance values for thecircuit of FIG. 13.

FIG. 15 shows various spectrum response curves associated with theexamples of FIGS. 9, 11 and 13.

FIG. 16A shows examples of the phase shifting circuits of FIGS. 13-15.

FIG. 16B shows more examples of the phase shifting circuits of FIGS.13-15.

FIG. 17 shows a process that can be implemented to fabricate a devicehaving one or more features as described herein.

FIG. 18 shows an RF module having one or more features as describedherein.

FIG. 19 shows an example of an RF architecture that includes one or morefeatures as described herein.

FIG. 20 depicts an example wireless device having one or moreadvantageous features described herein.

FIG. 21 shows that one or more features of the present disclosure can beimplemented in a diversity receive module.

FIG. 22 shows an example wireless device having the diversity receivemodule of FIG. 21.

DETAILED DESCRIPTION OF SOME EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Cellular carrier aggregation (CA) can be supported by allowing two ormore radio-frequency (RF) signals to be processed through a common path.For example, carrier aggregation can involve use of a path for aplurality of bands having frequency ranges that are sufficientlyseparated. In such a configuration, simultaneous operation of more thanone band is possible.

In the context of a receiver, carrier aggregation can allow concurrentprocessing of RF signals in a plurality of bands to provide, forexample, high data rate capability. In such a carrier aggregationsystem, it is desirable to maintain a low noise figure (NF) for each RFsignal. When two bands being aggregated are close in frequency,maintaining sufficient separation of the two bands is also desirable.

FIG. 1 shows a carrier aggregation (CA) configuration 100 that includesa CA circuit 110 configured to receive a plurality of inputs and yieldan output. The plurality of inputs can include a first RF signal and asecond RF signal. The first RF signal can be provided to the CA circuit110 from a common input node 102 (RF_IN), through a first path 104 athat includes a first filter 106 a. Similarly, the second RF signal canbe provided to the CA circuit 110 from the common input node 102(RF_IN), through a second path 104 b that includes a second filter 106b. As described herein, the CA circuit 110 can be configured such thatthe output at a common output node 114 is a recombined RF signal thatincludes two separated frequency bands associated with the first andsecond RF signals. As also described herein, the CA circuit 110 can beconfigured to yield desirable performance features such as low loss, lownoise figure, and/or high isolation between the two signal paths 104 a,104 b.

Various examples herein, including the example of FIG. 1, are describedin the context of aggregating two frequency bands. However, it will beunderstood that one or more features of the present disclosure can beimplemented in aggregation of more than two frequency bands. Forexample, FIG. 2 shows a CA aggregation configuration 100 where three RFsignals are separated at a common input node 102 (RF_IN), processedthrough their respective filters 106 a, 106 b, 106 c, and recombined bya CA circuit 110 to yield a recombined RF signal at a common output node114 (RF_OUT).

The aggregation configurations 100 of FIGS. 1 and 2 can be implementedin a number of RF applications. FIG. 3 shows a more specific examplewhere a CA circuit 110 having one or more features as described hereincan be implemented with a low-noise amplifier (LNA) in a receiver. TheCA circuit 110 can be configured to receive a plurality of inputs andyield an output. The plurality of inputs can include a first RF signaland a second RF signal. The first RF signal can be provided to the CAcircuit 110 from a common input node 102 (RF_IN), through a first paththat includes a first band-pass filter 122. Similarly, the second RFsignal can be provided to the CA circuit 110 from the common input node102 (RF_IN), through a second path that includes a second band-passfilter 124. As described herein, the CA circuit 110 can be configuredsuch that the output at a common output node 114 is a recombined RFsignal that includes two separated frequency bands associated with thefirst and second RF signals. As also described herein, the CA circuit110 can be configured to yield desirable performance features such aslow loss, low noise figure, and/or high isolation between the two inputsignal paths.

In FIG. 3, the recombined RF signal is shown to be provided to an LNA130 to amplify and thereby generate a low-noise amplified output signalat an output node 114. The LNA 130 can be configured to operate with asufficiently wide bandwidth to effectively amplify the first and secondbands of the recombined RF signal.

In some embodiments, the pass-band filters 122, 124 can be implementedin a number of ways, including, for example, as surface acoustic wave(SAW) filters. It will be understood that other types of filters can beutilized.

As described herein, the aggregation configuration 100 of FIG. 3 canprovide a number of advantageous features over other aggregationconfigurations. For example, FIG. 4 shows an aggregation configuration10 where an RF signal is separated at a common input node (RF_IN); andeach of the two separated RF signals is processed by a band-pass filter(12 or 16) and amplified by an LNA (14 or 18). The separately processedand amplified RF signals (bands “A” and “B”) are shown to be combined bya combiner 20 to yield an output RF signal at a common output node(RF_OUT).

In the example of FIG. 4, the combined output RF signal includesamplified noise contribution from each of the two LNAs. Accordingly,noise figure can degrade by, for example, approximately 3 dB.

Typically, lack of proper isolation between RF paths (e.g., pathsassociated with bands “A” and “B” of FIG. 4) and their respective bandscontributes to the noise figure of the combined RF signal. FIG. 5 showsan example of an aggregation configuration 30 where additional filteringof LNA outputs can be implemented to better isolate the frequency banddistributions between “A” and “B” bands. Similar to the example of FIG.4, the example aggregation configuration 30 includes an RF signal beingseparated at a common input node (RF_IN); and each of the two separatedRF signals being processed by a band-pass filter (32 or 42) andamplified by an LNA (34 or 44). The separately processed and amplifiedRF signals (bands “A” and “B”) are shown to be further filtered byrespective filters 36, 46 before being combined to yield a combined RFsignal at a common output node (RF_OUT). As a result of this filtering,the total noise output at the common output node (RF_OUT) in band “A”typically includes only a contribution from the LNA 34, while totalnoise output at the common output node (RF_OUT) in band “B” typicallyincludes only a contribution from the LNA 44. While this arrangementavoids the aforementioned example 3 dB noise degradation, it typicallysuffers from the excess cost associated with the two LNAs and the twopost-LNA filters.

In general, filters constructed from higher Q resonators provide betterisolation of frequency bands, especially for bands that are relativelyclose to each other. For example, cellular frequency bands B1 and B3have ranges of 2.110 to 2.170 GHz and 1.805 to 1.880 GHz, respectively,for receive operations. For such a pair of relatively close frequencybands, good band isolation is typically not possible with low Qresonators. Accordingly, high Q resonators are typically required ordesired. However, use of such additional high Q resonators downstream ofthe two LNAs (e.g., 34, 44 in FIG. 5) can be undesirable due to, forexample, additional cost and required space.

FIG. 6 shows a CA configuration 100 that can be a more specific exampleof the configuration of FIG. 3. The CA configuration 100 of FIG. 6 canprovide a number of desirable features, including those that addresssome or all of the problems associated with the examples of FIGS. 4 and5.

In FIG. 6, the example CA configuration 100 includes an RF signal beingseparated at a common input node 102 (RF_IN). The first separated RFsignal is shown to be filtered by a band-pass filter 122, and the secondseparated RF signal is shown to be filtered by a band-pass filter 124.The first and second filtered RF signals are shown to be provided to aCA circuit 110 which is configured to yield a combined signal at acommon node 126.

The CA circuit 110 is shown to include a phase circuit generallyindicated as 150, and a switch circuit generally indicated as 140.Examples of functionalities that can be provided by the phase circuit150 and the switch circuit 140 are described herein in greater detail.

The first filtered RF signal from the band-pass filter 122 is shown tobe passed through a first phase shifting circuit 152. Similarly, thesecond filtered RF signal from the band-pass filter 124 is shown to bepassed through a second phase shifting circuit 154. Examples of suchphase shifting circuits are described herein in greater detail.

The first and second RF signals from their respective phase shiftingcircuits (152, 154) are shown to be combined at the common node 126. Insome embodiments, a switch S1 can be implemented between the first phaseshifting circuit 152 and the common node 126, and a switch S2 can beimplemented between the second phase shifting circuit 154 and the commonnode 126. Such switches can allow the CA circuit 110 to operate in anon-CA mode or a CA mode. For example, in FIG. 6, the first switch S1 isshown to be closed, and the second switch S2 is shown to be open, suchthat the CA circuit 110 processes the first RF signal in thecorresponding frequency band in a non-CA mode. To process the second RFsignal in the other frequency band in a non-CA mode, the first switch S1can be opened, and the second switch S2 can be closed. In anotherexample, as shown in FIG. 7, both of the first and second switches canbe closed, such that the CA circuit 110 processes both of the first andsecond RF signals in their respective frequency bands in a CA mode.

In FIGS. 6 and 7, the common node 126 is shown to be coupled to an inputof an LNA 120 to allow the processed RF signal (either a combined RFsignal in a CA mode or a single-band RF signal in a non-CA mode) to beprocessed by the LNA 120. The LNA 120 is shown to generate an amplifiedRF signal as an output (RF_OUT) at node 114.

In the example of FIGS. 6 and 7, the switch circuit 140 can allow the CAcircuit 110 to operate in either the non-CA mode or CA mode. Inembodiments where the CA circuit 110 is configured to operate in CA modeonly, the switch circuit 140 may be omitted.

FIG. 8 shows an example CA configuration 100 where the first and secondsignal paths can be configured to provide selected impedances tofacilitate the CA operation. For the purpose of description, such signalpaths can be referred to as “A” and “B” bands, and such bands caninclude any combination of bands suitable for carrier aggregation. As inthe example of FIG. 7, both of the switches S1, S2 can be in theirclosed states to facilitate the CA operation.

As shown in the example of FIG. 8, the first and second phase shiftingcircuits 152, 154 can be utilized to couple the first (A) and second (B)band-pass filters 122, 124 with the LNA 120, and to provide desiredimpedance values for signals being combined and routed to the LNA 120.Examples of such adjustments of impedance values by the first and secondphase shifting circuits 152, 154 are described herein in greater detail.

Impedance of the first filter 122 can be tuned to provide a desiredimpedance for an A-band signal. Accordingly, impedance Z_(A) for theA-band signal at the output of the A-band filter 122 is approximately ata matched value of Z_(o) (e.g., 50 Ohms). In the B band, the impedanceZ_(B) for the B-band signal at the output of the A-band filter 122 isnot matched to Z_(o). Since the B band resides in the stopband of theA-band filter, the reflection coefficient |Γ_(B)| of this mismatch isapproximately unity. However, the phase of this reflection is typicallydependent upon the filter design. Accordingly, the impedance Z_(B) forthe B-band signal at the output of the A-band filter 122 could be anywidely mismatched value, either much greater or much smaller than Z_(o),that results in the condition |Γ_(B)|˜1.

Ideally, the A-band filter 122 should present an open circuit for aB-band signal. However, the A-band filter 122 may not provide such anideal open-circuit impedance for the B-band signal. Accordingly,impedance Z_(B) for the B-band signal at the output of the A-band filter122 can be expressed in a complex form Z_(B)=R_(B)+jX_(B), where thereal part (resistance R_(B)) and the imaginary part (reactance X_(B))place the impedance Z_(B) significantly away from the open circuit state(where one or both of X_(B) and R_(B) is/are approximately at infinity).As shown in FIG. 8, the first phase shifting circuit 152 can beconfigured so as to substantially maintain Z_(o) for Z_(A), and adjustZ_(B) from R_(B) jX_(B) to, or close to, the open circuit state.

Similarly, impedance of the second filter 124 can be tuned to provide adesired impedance for the B-band signal. Accordingly, impedance Z_(B)for the B-band signal at the output of the B-band filter 124 isapproximately at the matched value of Z_(o) (e.g., 50 Ohms). In the Aband, the impedance Z_(A) for the A-band signal at the output of theB-band filter 122 is not matched to Z_(o). Since the A band resides inthe stopband of the B-band filter, the reflection coefficient |Γ_(A)| ofthis mismatch is approximately unity. However, the phase of thisreflection is dependent upon the filter design. Accordingly, theimpedance Z_(A) for the A-band signal at the output of the B-band filter122 could be any widely mismatched value, either much greater or muchsmaller than Z_(o), that results in the condition |Γ_(A)|˜1.

Ideally, the B-band filter 124 should look like an open circuit for theA-band signal. However, the B-band filter 124 may not provide such anideal open-circuit impedance for the A-band signal. Accordingly,impedance Z_(A) for the A-band signal at the output of the B-band filter124 can be expressed in a complex form Z_(A)=R_(A)+jX_(A), where thereal part (resistance R_(A)) and the imaginary part (reactance X_(A))place the impedance Z_(A) significantly away from the open circuit state(where one or both of X_(A) and R_(A) is/are approximately at infinity).As shown in FIG. 8, the second phase shifting circuit 154 can beconfigured so as to substantially maintain Z_(o) for Z_(B), and adjustZ_(A) from R_(A)+jX_(A) to, or close to, the open circuit state.

As shown in FIG. 8, the CA configuration 100 with the first and secondsignal paths configured in the foregoing manner allows the combinationof the A-band signal and the B-band signal from their respective pathsto be impedance matched for the LNA, and to have the non-band frequencycomponents substantially blocked out. Accordingly, noise figureperformance can be improved without having to utilize additional high-Qfilters such as SAW filters.

FIGS. 9-15 show examples of two frequency band paths and how phaseshifting circuits along such paths can yield desirable impedances asdescribed in reference to FIG. 8. In FIG. 9, two isolated receive (Rx)paths associated with example bands B3 (1,805-1,880 MHz) and B1/4(2,110-2,170 MHz) are shown. The B3 band path can be considered to be anexample of the generic A-band path of FIG. 8, and the B1/4 band path canbe considered to be an example of the generic B-band path.

In FIG. 9, the isolated B3 band path includes a B3 filter “A” between anantenna node (ANT B3) and an output node (RX B3). However, the B3 bandpath does not include a phase shifting circuit between the B3 filter andthe output node (RX B3). Similarly, the isolated B1/4 band path includesa B1/4 filter “B” between an antenna node (ANT B1) and an output node(RX B1), but not a phase shifting circuit.

FIG. 10 shows example Smith plots of complex impedance values at the RXB1 node (upper left plot), BX B3 node (upper right plot), ANT B1 node(lower left plot), and ANT B3 node (lower right plot) in a frequencysweep between 1.792 GHz and 2.195 GHz, for the circuit of FIG. 9. Moreparticularly, impedance values for points m28 and m29 correspond tolower (1.805 GHz) and upper (1.880 GHz) limits, respectively, of the B3Rx band at the RX B1 node; impedance values for points m6 and m14correspond to lower (2.110 GHz) and upper (2.170 GHz) limits,respectively, of the B1 Rx band at the RX B3 node; impedance values forpoints m5 and m7 correspond to lower (1.805 GHz) and upper (1.880 GHz)limits, respectively, of the B3 Rx band at the ANT B1 node; andimpedance values for points m3 and m4 correspond to lower (2.110 GHz)and upper (2.170 GHz) limits, respectively, of the B1 Rx band at the ANTB3 node.

In FIG. 10, one can see that each of the impedance ranges (m28 to m29,m6 to m14, m5 to m7, m3 to m4) is significantly displaced from theopen-circuit impedance location on the Smith plot, while remaining closeto the outer perimeter of the Smith plot.

FIG. 11 shows two isolated receive (Rx) paths associated with theexample bands B3 Rx (1,805-1,880 MHz) and B1/4 Rx (2,110-2,170 MHz),where each path includes a first phase shifting circuit, a filter, and asecond phase shifting circuit between its antenna node and an outputnode. More particularly, the B3 path includes a first phase shiftingcircuit 200, a B3 filter, and a second phase shifting circuit 202between an antenna node (ANT B3) and an output node (RX B3). Similarly,the B1/4 band path includes a first phase shifting circuit 204, a B1/4filter, and a second phase shifting circuit 206 between an antenna node(ANT B1) and an output node (RX B1).

FIG. 12 shows example Smith plots of complex impedance values at the RXB1 node (upper left plot), BX B3 node (upper right plot), ANT B1 node(lower left plot), and ANT B3 node (lower right plot), for the circuitof FIG. 11. Similar to the example of FIG. 10, impedance values forpoints m28 and m29 correspond to lower (1.805 GHz) and upper (1.880 GHz)limits, respectively, of the B3 Rx band at the RX B1 node; impedancevalues for points m6 and m14 correspond to lower (2.110 GHz) and upper(2.170 GHz) limits, respectively, of the B1 Rx band at the RX B3 node;impedance values for points m5 and m7 correspond to lower (1.805 GHz)and upper (1.880 GHz) limits, respectively, of the B3 Rx band at the ANTB1 node; and impedance values for points m3 and m4 correspond to lower(2.110 GHz) and upper (2.170 GHz) limits, respectively, of the B1 Rxband at the ANT B3 node.

In FIG. 12, one can see that each of the four plots has been rotated, byan amount such that each of the impedance ranges (m28 to m29, m6 to m14,m5 to m7, m3 to m4) straddles the Im(Z)=0 line, and has a large Re(Z)value so as to be at or close to the open-circuit impedance location onthe Smith plot. In some embodiments, the amount of delay applied by eachdelay element in FIG. 11 can be selected to yield the amount of rotationshown in the corresponding Smith plot.

As described in reference to FIGS. 11 and 12, it is desirable to haveantenna side of the filters to be tuned to present high impedance toopposite-band signals. In some embodiments, the antenna side of adiplexer (e.g., a B3-B1/4 diplexer) can be configured to present adesired high impedance for an opposite-band (e.g., a B3 band frequencysignal or a B1/4 band frequency signal) entering a band filter (e.g., aB1/4 band filter or a B3 band filter) of the diplexer.

FIG. 13 shows the two example receive (Rx) paths of FIG. 11 connected atthe ends so as to yield a common antenna node (ANT B1/B3) and a commonoutput node (RX B1/B3). In some embodiments, such coupled paths can beconfigured such that each band path provides a substantiallyopen-circuit impedance for an out-band signal (e.g., B1/4 band signal inthe B3 band path, and B3 band signal in the B1/4 band path) as describedin FIGS. 11 and 12, as well as to provide, when coupled together asshown in FIG. 13, matched impedances for the two band signals, at boththe common antenna node (ANT B1/B3) and the common output node (RXB1/B3).

FIG. 14 shows example Smith plots of complex impedance values at thecommon output node RX B1/B3 (upper left plot), and at the common antennanode (ANT B1/B3) (lower left plot), for the circuit of FIG. 13. For theRX B1/B3 node, impedance values for points m53 and m54 correspond to B3band frequencies of 1.805 GHz and 1.880 GHz, respectively, and impedancevalues for points m55 and m56 correspond to B1 band frequencies of 2.110GHz and 2.170 GHz, respectively. All points m54, m54, m55, m56 areclustered near the center of the Smith chart, indicating that theimpedance of the RX B1/B3 node is substantially well-matched to 50 ohmsat all frequencies in both bands B1 and B3. This occurs because eachpath in its own band is generally undisturbed by the other path; thusthe combined circuit presents a match in band B1 determinedsubstantially by the B1 path alone, and a match in band B3 determinedsubstantially by the B3 path alone, even though the paths are physicallytied together.

Likewise, for the ANT B1/B3 node, impedance values for points m46 andm47 correspond to frequencies of 1.805 GHz and 1.880 GHz, respectively,and impedance values for points m48 and m49 correspond to B1 bandfrequencies of 2.110 GHz and 2.170 GHz, respectively. All points m46,m47, m48, m49 are clustered near the center of the Smith chart,indicating that the impedance of the ANT B1/B3 node is substantiallywell-matched to 50 ohms at all frequencies in both bands B1 and B3. Thisoccurs because each path in its own band is generally undisturbed by theother path; thus the combined circuit presents a match in band B1determined substantially by the B1 path alone, and a match in band B3determined substantially by the B3 path alone, even though the paths arephysically tied together.

FIG. 14 further shows a distribution of reflection coefficient S11(S(4,4) in FIG. 14) at the ANT B1/B3 node (lower right panel) and adistribution of reflection coefficient S22 (S(5,5) in FIG. 14) at the RXB1/B3 node (upper right panel), for the circuit of FIG. 13. In the S11(S(4,4)) and S22 (S(5,5)) distributions, the matching at each of the twoRX bands (B3 RX and B1 RX) is prominent

FIG. 15 shows, in the upper left panel, a spectrum response of the B3receive path, and an independent spectrum response of the B1 receivepath, for the circuit of FIG. 9. The same responses apply, substantiallyunchanged, to the circuit of FIG. 11, since the added delays in FIG. 11generally affect only phase and not amplitude for each path. A peak ingain of the B3 RX band (e.g., a B3 passband) is indicated as 230, and apeak in gain of the B1 RX band (e.g., a B1 passband) is indicated as232. It is noted that each path exhibits greater than 30 dB attenuationin the opposite band.

In FIG. 15, the upper right panel shows a single spectrum response forthe circuit of FIG. 13. It is noted that this single response exhibitstwo passbands, with the B3 RX passband indicated as 234, and the B1 RXpassband indicated as 236.

In FIG. 15, the lower left panel shows an overlap of the B3 RX passband230 exhibited by the independent B3 receive path of FIG. 9/FIG. 11, withthe B3 RX passband 234 exhibited by the combined circuit of FIG. 13. Thelower right panel shows an overlap of the B1 RX passband 232 exhibitedby the independent B1 receive path of FIG. 9/FIG. 11, with the B1 RXpassband 236 exhibited by the combined circuit of FIG. 13. In bothexamples of the lower right panel and the lower left panel, one can seethat each passband of the combined circuit of FIG. 13 substantiallyresembles the passband of the respective independent receive path fromwhich it was formed, in both bandwidth and characteristic ripple.Further, the gain distribution of a given band before the correspondingphase shifting circuit is added and the paths combined, is only slightlyhigher than the distribution after such addition of the phase shiftingcircuit and combining of the paths. Thus, one can see that the phaseshifting circuits having one or more features as described herein can beconfigured to provide desired functionalities with little or no loss.

FIG. 16A shows more specific examples of the phase shifting circuitssuch as circuits 212, 216 of FIGS. 13-15. In FIG. 16A, a CAconfiguration 100 can be an example of the CA configuration 100 of FIG.8. An input RF signal (RF_IN) from an antenna can be received at aninput node 102. A diplexer 260 is shown to be coupled to the input node102 so as to receive the input RF signal. Such a received signal can beprocessed through filters 122, 124 configured to provide band-passfunctionality for band A and band B. Examples of such bands aredescribed herein in greater detail. In some embodiments, the diplexer260 can be configured to provide impedance matching for the input RFsignal, as described herein in reference to FIGS. 11-15.

Outputs of the band-pass filters 122, 124 are shown to be routed to afirst path that includes a first phase shifting circuit 152, and asecond path that includes a second phase shifting circuit 154. The firstpath is shown to further include a switch S1 between the first phaseshifting circuit 152 and a common output node. The second path is shownto further include a switch S2 between the second phase shifting circuit154 and the common output node.

The common output node receiving processed signals from the foregoingfirst and second paths is shown to be coupled to an input of an LNA 120.The LNA 120 is shown to yield an amplified output signal (RF_OUT) at anode 114.

The first phase shifting circuit 152 is shown to include capacitances C5and C6 arranged in series between its input (from an output of the bandA filter 122) and the switch S1. An inductance L5 is shown to couple anode between C5 and C6 with ground.

The second phase shifting circuit 154 is shown to include capacitancesC2 and C3 arranged in series between its input (from an output of theband B filter 124) and the switch S2. An inductance L4 is shown tocouple a node between C2 and C3 with ground.

FIG. 16B shows more specific examples of the phase shifting circuitssuch as circuits 212, 216 of FIGS. 13-15, implemented in a low-passphase shifter configuration. In FIG. 16B, a CA configuration 100 can bean example of the CA configuration 100 of FIG. 8. An input RF signal(RF_IN) from an antenna can be received at an input node 102. A diplexer260 is shown to be coupled to the input node 102 so as to receive theinput RF signal. Such a received signal can be processed through filters122, 124 configured to provide band-pass functionality for band A andband B. Examples of such bands are described herein in greater detail.In some embodiments, the diplexer 260 can be configured to provideimpedance matching for the input RF signal, as described herein inreference to FIGS. 11-15.

Outputs of the band-pass filters 122, 124 are shown to be routed to afirst path that includes a first phase shifting circuit 152, and asecond path that includes a second phase shifting circuit 154. The firstpath is shown to further include a switch S1 between the first phaseshifting circuit 152 and a common output node. The second path is shownto further include a switch S2 between the second phase shifting circuit154 and the common output node.

The common output node receiving processed signals from the foregoingfirst and second paths is shown to be coupled to an input of an LNA 120.The LNA 120 is shown to yield an amplified output signal (RF_OUT) at anode 114.

The first phase shifting circuit 152 is shown to include inductances L5′and L6′ arranged in series between its input (from an output of the bandA filter 122) and the switch S1. A capacitance C5′ is shown to couple anode between L5′ and L6′ with ground.

The second phase shifting circuit 154 is shown to include inductancesL2′ and L3′ arranged in series between its input (from an output of theband B filter 124) and the switch S2. A capacitance C4′ is shown tocouple a node between L2′ and L3′ with ground.

In some embodiments, various functionalities as described herein inreference to, for example, FIGS. 8 and 13 can be obtained with values ofcapacitances and inductances for the example configuration of FIG. 16Afor the example bands of B3 RX and B1/4 RX, as listed in Table 1.

TABLE 1 Capacitance/inductance Approximate value C2 1.71 pF C3 1.71 pFC5 5.38 pF C6 6.38 pF L4 4 nH L5 7.668 nHIt will be understood that for other pairs of bands, values for thecapacitances and inductances can be selected accordingly. It will alsobe understood that the same or similar various functionalities may beaccomplished with appropriate values for the elements of the examplecircuit of FIG. 16B.

In some embodiments, some or all of the capacitances and/or inductancescan be implemented as parts of signal paths or other conductivefeatures, as lumped elements, or any combination thereof.

FIG. 17 shows a process 280 that can be implemented to fabricate adevice having one or more features as described herein. In block 282, acircuit having at least a diplexer functionality can be mounted orprovided on a substrate. In various examples, carrier aggregation (CA)is described in the context of diplexers; however, it will be understoodthat CA can also be implemented with more than two bands (e.g.,utilizing multiplexers). In some embodiments, a diplexer can beimplemented as a device; and such a device can be mounted on thesubstrate.

In block 284, a first phase shifting circuit can be formed or providedbetween a first output of the diplexer circuit and an input of a firstswitch. In block 286, a second phase shifting circuit can be formed orprovided between a second output of the diplexer circuit and an input ofa second switch. In block 288, an output of the first switch and anoutput of the second switch can be coupled with a common node. In someembodiments, such a configuration of the first and second phase shiftingcircuits being coupled to the common node through their respectiveswitches can facilitate operation of the device in a CA mode or a non-CAmode.

In block 290, the common node can be coupled to an input of a low-noiseamplifier (LNA). In some embodiments, such an aggregation of the twosignal paths into a single LNA can allow the LNA to operate in the CAmode or the non-CA mode, as determined by the state of the switches.

In some embodiments, the device described in FIG. 17 can be a moduleconfigured for RF applications. FIG. 18 shows a block diagram of an RFmodule 300 (e.g., a front-end module) having a packaging substrate 302such as a laminate substrate. Such a module can include one or moreLNAs; and in some embodiments, such LNA(s) can be implemented on asemiconductor die 304. An LNA implemented on such a die can beconfigured to receive RF signals through signal paths as describedherein. Such an LNA can also benefit from the one or more advantageousfeatures associated with improved carrier aggregation (CA)functionalities as described herein.

The module 300 can further include a plurality of switches implementedon one or more semiconductor die 306. Such switches can be configured toprovide the various switching functionalities as described herein,including providing and/or facilitating isolation, enabling/disabling CAmode of operation, and band selection in a non-CA mode.

The module 300 can further include one or more diplexers and/or aplurality of filters (collectively indicated as 310) configured toprocess RF signals. Such diplexers/filters can be implemented assurface-mount devices (SMDs), as part of an integrated circuit (IC), ofsome combination thereof. Such diplexers/filters can include or be basedon, for example, SAW filters, and can be configured as high Q devices.

In FIG. 18, a plurality of phase shifting circuits are collectivelyindicated as 308. Such phase shifting circuits can include one or morefeatures as described herein to provide, among others, improvedisolation between paths associated with different bands being operatedin a CA mode.

FIG. 19 shows an example of an RF architecture 400 that includes one ormore features as described herein. In some embodiments, such anarchitecture can be implemented on a module 300 such as the exampledescribed in reference to FIG. 18. It will be understood that thearchitecture 400 of FIG. 19 does not necessarily need to be confined tomodule.

The example architecture 400 of FIG. 19 can include a number of signalpaths configured for receiving and/or transmitting RF signals. Thearchitecture 400 can also include an antenna switching circuit 404coupled to an antenna port 402. Such an antenna switching circuit can beconfigured to route RF signals in cellular frequency ranges to multiplepaths associated with different cellular bands. In the example shown,the antenna switching circuit 404 includes a single-pole-2-throw (SP2T)switch, with the pole being coupled to the antenna port 402.

In the context of the example RX paths, the first path is configured forB2/625/4 bands, and the second path is configured for B3/61/4 bands. RFsignals associated with such bands are shown to be processed by theirrespective filters 406.

Signals in the B2/625/4 bands (e.g., 1.930 to 1.995 GHz and 2.110 to2.155 GHz) of the first path can be carrier aggregated as describedherein and be amplified by an LNA of the group of LNAs 410. As describedherein, carrier aggregation for the B2/625/4 bands can include aplurality of phase shifting circuits implemented between the B2/625/4diplexer and the LNA. As also described herein, the paths between suchphase shifting circuits and the LNA can include respective switches toallow operations in CA mode as well as non-CA mode.

Signals in the B3/B1/4 bands (e.g., 1.805 to 1.880 GHz and 2.110 to2.170 GHz) of the second path can be carrier aggregated as describedherein and be amplified by an LNA of the group of LNAs 410. Such an LNAcan be configured to provide bandwidth coverage of, for example, 1.805to 2.170 GHz. As described herein, such carrier aggregation can includea plurality of phase shifting circuits implemented between the B3/B1/4diplexer and the LNA. As also described herein, the paths between suchphase shifting circuits and the LNA can include respective switches toallow operations in CA mode as well as non-CA mode.

The amplified signals from the LNA can be routed to a band selectionswitch 412. The band selection switch 412 is shown to be coupled to anode 416 to allow further processing of an amplified RF signal from theselected LNA.

In some implementations, an architecture, device and/or circuit havingone or more features described herein can be included in an RF devicesuch as a wireless device. Such an architecture, device and/or circuitcan be implemented directly in the wireless device, in one or moremodular forms as described herein, or in some combination thereof. Insome embodiments, such a wireless device can include, for example, acellular phone, a smart-phone, a hand-held wireless device with orwithout phone functionality, a wireless tablet, a wireless router, awireless access point, a wireless base station, etc. Although describedin the context of wireless devices, it will be understood that one ormore features of the present disclosure can also be implemented in otherRF systems such as base stations.

FIG. 20 schematically depicts an example wireless device 500 having oneor more advantageous features described herein. In some embodiments,such advantageous features can be implemented in a front-end (FE) module300 and/or in an architecture 400 as described herein. One or more ofsuch features can also be implemented in a main antenna switch module(ASM) 514. In some embodiments, such an FEM/architecture can includemore or less components than as indicated by the dashed box.

PAs in a PA module 512 can receive their respective RF signals from atransceiver 510 that can be configured and operated to generate RFsignals to be amplified and transmitted, and to process receivedsignals. The transceiver 510 is shown to interact with a basebandsub-system 508 that is configured to provide conversion between dataand/or voice signals suitable for a user and RF signals suitable for thetransceiver 510. The transceiver 510 is also shown to be connected to apower management component 506 that is configured to manage power forthe operation of the wireless device 500. Such power management can alsocontrol operations of the baseband sub-system 508 and other componentsof the wireless device 500.

The baseband sub-system 508 is shown to be connected to a user interface502 to facilitate various input and output of voice and/or data providedto and received from the user. The baseband sub-system 508 can also beconnected to a memory 504 that is configured to store data and/orinstructions to facilitate the operation of the wireless device, and/orto provide storage of information for the user.

In the example wireless device 500, the front-end module300/architecture 400 can include one or more carrier aggregation-capablesignal paths configured to provide one or more functionalities asdescribed herein. Such signal paths can be in communication with anantenna switch module (ASM) 404 through their respective diplexer(s). Insome embodiments, at least some of the signals received through adiversity antenna 530 can be routed from the ASM 404 to one or morelow-noise amplifiers (LNAs) 518 in manners as described herein.Amplified signals from the LNAs 518 are shown to be routed to thetransceiver 510.

A number of other wireless device configurations can utilize one or morefeatures described herein. For example, a wireless device does not needto be a multi-band device. In another example, a wireless device caninclude additional antennas such as diversity antenna, and additionalconnectivity features such as Wi-Fi, Bluetooth, and GPS.

Examples Related to Diversity Receive (DRx) Implementation:

Using one or more main antennas and one or more diversity antennas in awireless device can improve quality of signal reception. For example, adiversity antenna can provide additional sampling of RF signals in thevicinity of the wireless device. Additionally, a wireless device'stransceiver can be configured to process the signals received by themain and diversity antennas to obtain a receive signal of higher energyand/or improved fidelity, when compared to a configuration using onlythe main antenna.

To reduce the correlation between signals received by the main anddiversity antennas and/or to enhance antenna isolation, the main anddiversity antennas can be separated by a relatively large physicaldistance in the wireless device. For example, the diversity antenna canbe positioned near the top of the wireless device and the main antennacan be positioned near the bottom of the wireless device, or vice-versa.

The wireless device can transmit or receive signals using the mainantenna by routing corresponding signals from or to the transceiverthrough an antenna switch module. To meet or exceed designspecifications, the transceiver, the antenna switch module, and/or themain antenna can be in relatively close physical proximity to oneanother in the wireless device. Configuring the wireless device in thismanner can provide relatively small signal loss, low noise, and/or highisolation.

In the foregoing example, the main antenna being physically close to theantenna switch module can result in the diversity antenna beingpositioned relatively far from the antenna switch module. In such aconfiguration, a relatively long signal path between the diversityantenna and the antenna switch module can result in significant lossand/or addition of loss associated with the signal received through thediversity antenna. Accordingly, processing of the signal receivedthrough the diversity antenna, including implementation of one or morefeatures as described herein, in the close proximity to the diversityantenna can be advantageous.

FIG. 21 shows that in some embodiments, one or more features of thepresent disclosure can be implemented in a diversity receive (DRx)module 300. Such a module can include a packaging substrate 302 (e.g., alaminate substrate) configured to receive a plurality of components, aswell to provide or facilitate electrical connections associated withsuch components.

In the example of FIG. 21, the DRx module 300 can be configured toreceive an RF signal from a diversity antenna (not shown in FIG. 21) atan input 320 and route such an RF signal to a low-noise amplifier (LNA)332. It will be understood that such routing of the RF signal caninvolve carrier-aggregation (CA) and/or non-CA configurations. It willalso be understood that although one LNA (e.g., a broadband LNA) isshown, there may be more than one LNAs in the DRx module 300. Dependingon the type of LNA and the mode of operation (e.g., CA or non-CA), anoutput 334 of the LNA 332 can include one or more frequency componentsassociated with one or more frequency bands.

In some embodiments, some or all of the foregoing routing of the RFsignal between the input 320 and the LNA 332 can be facilitated by anassembly of one or more switches 322 between the input 320 and anassembly of diplexer(s) and/or filter(s) (collectively indicated as324), and an assembly of one or more switches 330 between thediplexer/filter assembly 324 and the LNA 332. In some embodiments, theswitch assemblies 322, 330 can be implemented on, for example, one ormore silicon-on-insulator (SOI) die. In some embodiments, some or all ofthe foregoing routing of the RF signal between the input 320 and the LNA332 can be achieved without some or all of the switches associated withthe switch-assemblies 322, 330.

In the example of FIG. 21, the diplexer/filter assembly 324 is depictedas including two example diplexers 326 and two individual filters 328.It will be understood that the DRx module 300 can have more or lessnumbers of diplexers, and more or less numbers of individual filters.Such diplexer(s)/filter(s) can be implemented as, for example,surface-mount devices (SMDs), as part of an integrated circuit (IC), ofsome combination thereof. Such diplexers/filters can include or be basedon, for example, SAW filters, and can be configured as high Q devices.

In some embodiments, the DRx module 300 can include a control componentsuch as a MIPI RFFE interface 340 configured to provide and/orfacilitate control functionalities associated with some or all of theswitch assemblies 322, 330 and the LNA 332. Such a control interface canbe configured to operate with one or more I/O signals 342.

FIG. 22 shows that in some embodiments, a DRx module 300 having one ormore features as described herein (e.g., DRx module 300 of FIG. 21) canbe included in an RF device such as a wireless device 500. In such awireless device, components such as user interface 502, memory 504,power management 506, baseband sub-system 508, transceiver 510, poweramplifier (PA) 512, antenna switch module (ASM) 514, and antenna 520 canbe generally similar to the examples of FIG. 20.

In some embodiments, the DRx module 300 can be implemented between oneor more diversity antennas and the ASM 514. Such a configuration canallow an RF signal received through the diversity antenna 530 to beprocessed (in some embodiments, including amplification by an LNA) withlittle or no loss of and/or little or no addition of noise to the RFsignal from the diversity antenna 530. Such processed signal from theDRx module 300 can then be routed to the ASM through one or more signalpaths 532 which can be relatively lossy.

In the example of FIG. 22, the RF signal from the DRx module 300 can berouted through the ASM 514 to the transceiver 510 through one or morereceive (Rx) paths. Some or all of such Rx paths can include theirrespective LNA(s). In some embodiments, the RF signal from the DRxmodule 300 may or may not be further amplified with such LNA(s).

One or more features of the present disclosure can be implemented withvarious cellular frequency bands as described herein. Examples of suchbands are listed in Table 2. It will be understood that at least some ofthe bands can be divided into sub-bands. It will also be understood thatone or more features of the present disclosure can be implemented withfrequency ranges that do not have designations such as the examples ofTable 2.

TABLE 2 Tx Frequency Rx Frequency Band Mode Range (MHz) Range (MHz) B1FDD 1,920-1,980 2,110-2,170 B2 FDD 1,850-1,910 1,930-1,990 B3 FDD1,710-1,785 1,805-1,880 B4 FDD 1,710-1,755 2,110-2,155 B5 FDD 824-849869-894 B6 FDD 830-840 875-885 B7 FDD 2,500-2,570 2,620-2,690 B8 FDD880-915 925-960 B9 FDD 1,749.9-1,784.9 1,844.9-1,879.9 B10 FDD1,710-1,770 2,110-2,170 B11 FDD 1,427.9-1,447.9 1,475.9-1,495.9 B12 FDD699-716 729-746 B13 FDD 777-787 746-756 B14 FDD 788-798 758-768 B15 FDD1,900-1,920 2,600-2,620 B16 FDD 2,010-2,025 2,585-2,600 B17 FDD 704-716734-746 B18 FDD 815-830 860-875 B19 FDD 830-845 875-890 B20 FDD 832-862791-821 B21 FDD 1,447.9-1,462.9 1,495.9-1,510.9 B22 FDD 3,410-3,4903,510-3,590 B23 FDD 2,000-2,020 2,180-2,200 B24 FDD 1,626.5-1,660.51,525-1,559 B25 FDD 1,850-1,915 1,930-1,995 B26 FDD 814-849 859-894 B27FDD 807-824 852-869 B28 FDD 703-748 758-803 B29 FDD N/A 716-728 B30 FDD2,305-2,315 2,350-2,360 B31 FDD 452.5-457.5 462.5-467.5 B33 TDD1,900-1,920 1,900-1,920 B34 TDD 2,010-2,025 2,010-2,025 B35 TDD1,850-1,910 1,850-1,910 B36 TDD 1,930-1,990 1,930-1,990 B37 TDD1,910-1,930 1,910-1,930 B38 TDD 2,570-2,620 2,570-2,620 B39 TDD1,880-1,920 1,880-1,920 B40 TDD 2,300-2,400 2,300-2,400 B41 TDD2,496-2,690 2,496-2,690 B42 TDD 3,400-3,600 3,400-3,600 B43 TDD3,600-3,800 3,600-3,800 B44 TDD 703-803 703-803

For the purpose of description, it will be understood that“multiplexer,” “multiplexing” and the like can include “diplexer,”“diplexing” and the like.

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Additionally, the words “herein,” “above,” “below,” and words of similarimport, when used in this application, shall refer to this applicationas a whole and not to any particular portions of this application. Wherethe context permits, words in the above Detailed Description using thesingular or plural number may also include the plural or singular numberrespectively. The word “or” in reference to a list of two or more items,that word covers all of the following interpretations of the word: anyof the items in the list, all of the items in the list, and anycombination of the items in the list.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While some embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

What is claimed is:
 1. A carrier aggregation circuit for a firstfrequency band and a second frequency band, comprising a first node anda second node; a first path implemented between the first and secondnodes, and including a first filter configured to provide a matchedimpedance in the first frequency band and a mismatched impedance in thesecond frequency band, the first path further including a first phaseshifting circuit configured to adjust the mismatched impedance in thesecond frequency band to an approximately open-circuit impedance in thesecond frequency band; a second path implemented between the first andsecond nodes, and including a second filter configured to provide amatched impedance in the second frequency band and a mismatchedimpedance in the first frequency band, the second path further includinga second phase shifting circuit configured to adjust the mismatchedimpedance in the first frequency band to an approximately open-circuitimpedance in the first frequency band; and a switch assembly implementedto allow operation of either or both of the first and second paths. 2.The carrier aggregation circuit of claim 1 wherein the first node isconfigured to be coupled to a receive antenna, and the second node isconfigured to be coupled to an input of a low-noise amplifier.
 3. Thecarrier aggregation circuit of claim 1 wherein the first phase shiftingcircuit is further configured to substantially maintain the matchedimpedance in the first frequency band, and the second phase shiftingcircuit is further configured to substantially maintain the matchedimpedance in the second frequency band.
 4. The carrier aggregationcircuit of claim 1 wherein the first phase shifting circuit is betweenthe first filter and the second node, and the second phase shiftingcircuit is between the second filter and the second node.
 5. The carrieraggregation circuit of claim 1 wherein the switch assembly includes afirst switch implemented along the first path and a second switchimplemented along the second path.
 6. The carrier aggregation circuit ofclaim 5 wherein the first switch is implemented between the first phaseshifting circuit and the second node, and the second switch isimplemented between the second phase shifting circuit and the secondnode.
 7. The carrier aggregation circuit of claim 5 wherein each of thefirst and second switches is configured to be in a closed state when ina carrier aggregation mode.
 8. The carrier aggregation circuit of claim5 wherein one of the first and second switches is configured to be in aclosed state, and the other switch is configured to be in an open state,when in a non-carrier aggregation mode.
 9. The carrier aggregationcircuit of claim 1 wherein the first filter and the second filter areparts of a diplexer that includes an input port coupled to the firstnode.
 10. The carrier aggregation circuit of claim 1 wherein each of thefirst and second phase shifting circuits includes two seriescapacitances and an inductive path that couples a node between the twocapacitances and a ground.
 11. The carrier aggregation circuit of claim1 wherein each of the first and second phase shifting circuits includestwo series inductances and a capacitive path that couples a node betweenthe two inductances and a ground.
 12. A method for carrier aggregationinvolving a first frequency band and a second frequency band, the methodcomprising receiving a signal at a first node; processing a firstportion of the signal to a second node through a first path, theprocessing including filtering the first portion to provide a matchedimpedance in the first frequency band and a mismatched impedance in thesecond frequency band, the processing further including phase shiftingto adjust the mismatched impedance in the second frequency band to anapproximately open-circuit impedance in the second frequency band;processing a second portion of the signal to the second node through asecond path, the processing including filtering the second portion toprovide a matched impedance in the second frequency band and amismatched impedance in the first frequency band, the processing furtherincluding phase shifting to adjust the mismatched impedance in the firstfrequency band to an approximately open-circuit impedance in the firstfrequency band; and operating a switch assembly to allow either or bothof the processing of the first portion and the second portion.
 13. Themethod of claim 12 wherein the phase shifting of the processing of thefirst portion substantially maintains the matched impedance in the firstfrequency band, and the phase shifting of the processing of the secondportion substantially maintains the matched impedance in the secondfrequency band.
 14. The method of claim 12 wherein the phase shifting ofthe processing of the first portion occurs after the filtering of thefirst portion, and the phase shifting of the processing of the secondportion occurs after the filtering of the second portion.
 15. The methodof claim 12 wherein the operating of the switch assembly includesoperating a first switch implemented along the first path and operatinga second switch implemented along the second path, such that each of thefirst and second switches is in a closed state when in a carrieraggregation mode, and one of the first and second switches is in aclosed state and the other switch is in an open state when in anon-carrier aggregation mode.
 16. A radio-frequency module comprising apackaging substrate configured to receive a plurality of components; anda carrier aggregation circuit for a first frequency band and a secondfrequency band, implemented on the packaging substrate, the carrieraggregation circuit including a first node and a second node, and afirst path implemented between the first and second nodes, and includinga first filter configured to provide a matched impedance in the firstfrequency band and a mismatched impedance in the second frequency band,the first path further including a first phase shifting circuitconfigured to adjust the mismatched impedance in the second frequencyband to an approximately open-circuit impedance in the second frequencyband, the carrier aggregation circuit further including a second pathimplemented between the first and second nodes, and including a secondfilter configured to provide a matched impedance in the second frequencyband and a mismatched impedance in the first frequency band, the secondpath further including a second phase shifting circuit configured toadjust the mismatched impedance in the first frequency band to anapproximately open-circuit impedance in the first frequency band, thecarrier aggregation circuit further including a switch assemblyimplemented to allow operation of either or both of the first and secondpaths.
 17. The radio-frequency module of claim 16 further comprising alow-noise amplifier implemented on the packaging substrate and having aninput coupled to the second node to receive and amplify a combinedsignal from the carrier aggregation circuit.
 18. The radio-frequencymodule of claim 17 wherein the first node is configured to be coupled toa receive antenna.
 19. The radio-frequency module of claim 18 whereinreceive antenna is a diversity receive antenna, and the radio-frequencymodule is a diversity receive module positioned in close proximity tothe diversity receive antenna.
 20. The radio-frequency module of claim16 further comprising a control component configured to allow operationof the switch assembly.